TS4148 0.35 / 0.5amps high speed switching diode voltage range 100 volts current 0.35 / 0.5 ampere features for surface mounted application low forward voltage drop high current capability fast switching for high efficiency high surge current capability chip version in 1206 and 0805, 0603 high temperature soldering: 260 o c / 10 seconds at terminals mechanical data cases: 1206, 0805 or 0603 terminals: tin plated polarity: indicated by cathode arrow packaging: 8 mm tape per eia std rs-481 item 1206 0805 0603 l 0.135(3.40) 0.119(3.0) 0.088(2.20) 0.072(1.8) 0.071(1.65) 0.59(1.45) w 0.07(1.70) 0.054(1.30) 0.058(1.45) 0.042(1.05) 0.039(0.9) 0.027(0.7) t 0.038(0.95) 0.03(0.75) 0.038(0.95) 0.03(0.75) 0.034(0.75) 0.026(0.55) c 0.03(0.75) 0.014(0.35) 0.026(0.65) 0.01(0.25) 0.018(0.45) 0.010(0.25) dimensions in inches and (millimeters) maximum ratings and el ectrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, re sistive or inductive load. for capacitive load, derate current by 20% type number symbol 0603 1206 0805 units maximum repetitive peak reverse voltage v rrm 100 v reverse voltage v r 75 v maximum average forward rectified current resistive load f>50hz i f(av) 150 ma 350 500 peak forward surge current 8.3 ms half sine-wave 1 us i fsm 2.0 ma a maximum instantaneous forward voltage @100ma v f 1.0 v maximum d.c. reverse current @ tc=25 vr=20v at rated dc blocking voltage @ tc=125 vr=20v i r 25 50 na ua typical reverse recovery time(note 2) t j =25 trr 5.0 ns typical junction capacitance (note 1) cj 1.55 1.65 1.60 pf typical thermal resistance r ja r jc 200 105 190 80 150 60 /w power dissipation p d 350 500 mw operating junction temperature range t j -65 to + 200 storage temperature range t stg -65 to + 200 notes: 1. measured at 1 mhz and applied reverse voltage of 4.0v d.c. 2. reverse recovery test conditions: i f =0.5a, i r =1.0a, recover to 0.25a. rev. 4 july 2004
fig.1- reverse recovery time characteristic and test circuit diagram 50 noninductive non inductive oscilloscope (note 1) pulse generator (note 2) dut (+) 50vdc (approx) (-) notes: 1. rise time=7ns max. input impedance= 1 megohm 22pf 2. rise time=10ns max. sourse impedance= 50 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm ratings and characteristic curves (TS4148) fig.3- typical reverse characteristics instantaneous reverse current .( a) 0 20 40 60 80 100 120 140 100 0.010 0.10 1 10 percent of rated peak reverse voltage. (%) tl=25 c 0 tl=150 c 0 fig.4- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 2 5 10 20 50 2.0 2.5 1.5 1.0 number of cycles at 60hz 8.3ms single half sine wave jedec method tj=25 c 0 fig.6- typical forward characteristics instantaneous for ward current . (ma) .4 .6 .8 1.0 1.2 1.4 1.6 1.8 1 10 100 200 300 forward voltage. (v) tj=25 c pulse width=300 s 1% duty cycle o fig.5- typical junction capacitance capacitance.(pf) 15 2 10 20 50 100 200 500 1.6 1.5 1.7 reverse voltage. (v) tj=25 c 0 1206 0805 fig.2- maximum forward current derating curve average for ward current . (ma) 0 100 200 300 0 50 100 150 200 250 case temperature. ( c) o 0603 0.5 1206 0603 0805
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